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| Semiconductor THN5702F SiGe NPN Transistor SOT-89 Unit in mm Applications - VHF and UHF wide band amplifier Features - Medium power(800mW, 1W) application - Power gain GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm GP = 16 dB at VCE = 3.0 V, f = 434 MHz, PIN = 0 dBm - Output power POUT = 29 dBm at VCE = 3.6 V, ICQ = 30 mA, f = 460 MHz POUT = 30 dBm at VCE = 4.5 V, ICQ = 50 mA, f = 460 MHz POUT = 31 dBm at VCE = 6.0 V, ICQ = 30 mA, f = 460 MHz POUT = 25 dBm at VCE = 3.0 V, ICQ = 50 mA, f = 434 MHz 4 3 2 1 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 15 10 1.5 800 1.5 150 -65 ~ 150 Unit V V V mA W 1 Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance from Junction to Ambient THN5702F Value 80 Unit K/W Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Power Gain IEBO hFE GP Test Conditions VCB = 13 V, IE = 0 mA VCE = 7 V, IB = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 4.5 V, IC = 150 mA VCE = 3.6 V, IC = 30 mA(RF off), f = 460 MHz, PIN=0dBm VCE = 4.5 V, IC = 50 mA(RF off), f = 460 MHz, PIN=0dBm VCE = 6.0 V, IC = 30 mA(RF off), f = 460 MHz, PIN=0dBm VCE = 3.0 V, IC = 50 mA(RF off), f = 434 MHz, PIN=0dBm Output Power POUT VCE = 3.6 V, IC = 30 mA(RF off), f = 460 MHz, PIN=15dBm VCE = 4.5 V, IC = 50 mA(RF off), f = 460 MHz, PIN=15dBm VCE = 6.0 V, IC = 30 mA(RF off), f = 460 MHz, PIN=15dBm VCE = 3.0 V, IC = 50 mA(RF off), f = 434 MHz, PIN=10dBm Reverse Transfer Capacitance Cre VCB = 4.5 V, IE = 0 mA, f = 1 MHz Min. 40 12 13 13 14 27 28 29 23 14 15 15 16 29 30 31 25 6.5 Typ. Max. 2.5 1.5 1.5 300 8.0 dB dB dB dB dBm dBm dBm dBm pF Unit hFE Classification Marking hFE Value PC1 40 - 200 PC2 170 - 300 2 THN5702F Typical Characteristics ( TA = 25, unless otherwise specified) Collector Current vs. Base to Emitter Voltage 100 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance, Cre (pF) 12 f = 1 MHz Collector Current, IC [mA] VCE = 4.5 V 80 11 10 9 8 7 6 5 4 0 1 2 3 4 5 6 7 8 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE [V] Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 150 VCE = 4.5 V 125 Collector Current vs. Collector to Emitter Voltage 0.9 0.8 Collector Current, IC (A) 0.7 0.6 0.5 0.4 0.3 0.2 IB = 2 mA 6 mA 8 mA DC Current Gain, hFE 100 75 50 25 0 0.01 4 mA 0.1 0.0 0.1 1 0 1 2 3 4 5 6 7 Collector Current, IC (A) Collector to Emitter Voltage, VCE (V) 3 THN5702F Application Information ( at f = 460 MHz ) Operation Mode CW, class-AB f (MHz) 460 VCE (V) 3.6 POUT (dBm) 29.0 GP (dB) 14.0 C (%) 54.9 Output Power or Power Gain vs. Input Power 35 f = 460 MHz, VCE = 3.6 V, ICQ = 30 mA 30 25 20 15 10 5 0 2 4 6 8 10 12 14 POUT GP 28 24 20 16 12 8 4 16 Collector Current or Power Added Efficiency vs. Input Power 0.8 f = 460 MHz, VCE = 3.6 V, ICQ = 30 mA 0.7 80 Power Gain, GP (dB) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 IC C 60 50 40 30 20 10 0 16 Input Power, PIN (dBm) Input Power, PIN (dBm) Operation Mode CW, class-AB f (MHz) 460 VCE (V) 6.0 POUT (dBm) 31.4 GP (dB) 16.4 C (%) 43.2 Output Power or Power Gain vs. Input Power 40 f = 460 MHz, VCE = 6.0 V, ICQ = 50 mA Collector Current or Power Added Efficiency vs. Input Power 28 24 0.8 f = 460 MHz, VCE = 6.0 V, ICQ = 50 mA 80 Output Power, POUT (dBm) Collector Current, IC (A) 35 30 25 20 15 10 0 2 4 6 8 10 12 14 16 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 IC C 60 50 40 30 20 10 0 18 POUT 20 GP 16 12 8 4 18 Input Power, PIN (dBm) Input Power, PIN (dBm) Power Added Efficiency, C (%) 0.7 70 Power Gain, GP (dB) Power Added Efficiency, C (%) 70 Output Power, POUT (dBm) Collector Current, IC (A) 4 THN5702F Application Information ( at f = 460 MHz ) Operation Mode CW, class-AB f (MHz) 460 VCE (V) 4.5 POUT (dBm) 30.0 GP (dB) 15.0 C (%) 50.8 Output Power or Power Gain vs. Input Power 40 f = 460 MHz, VCE = 4.5 V, ICQ = 5 mA Collector Current or Power Added Efficiency vs. Input Power 28 24 0.8 f = 460 MHz, VCE = 4.5 V, ICQ = 5 mA 80 Output Power, POUT (dBm) Collector Current, IC (A) 35 30 25 20 15 10 0 2 4 6 8 10 12 14 16 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 C 60 50 40 IC 30 20 10 0 18 POUT GP 20 16 12 8 4 18 Input Power, PIN (dBm) Input Power, PIN (dBm) Output Power or Power Gain vs. Input Power 40 f = 460 MHz, VCE = 4.5 V, ICQ = 50 mA Collector Current or Power Added Efficiency vs. Input Power 28 24 0.8 f = 460 MHz, VCE = 4.5 V, ICQ = 50 mA 80 Output Power, POUT (dBm) Collector Current, IC (A) 35 30 25 20 15 10 0 2 4 6 8 10 12 14 16 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 C 60 50 40 IC 30 20 10 0 18 POUT GP 20 16 12 8 4 18 Input Power, PIN (dBm) Input Power, PIN (dBm) Power Added Efficiency, C (%) 0.7 70 Power Gain, GP (dB) Power Added Efficiency, C (%) 0.7 70 Power Gain, GP (dB) 5 THN5702F Application Information ( f = 434 MHz ) Operation Mode CW, class-AB f (MHz) 434 VCE (V) 2.2 POUT (dBm) 24 GP (dB) 14 C (%) 38 Output Power or Power Gain vs. Input Power 35 f = 434 MHz, VCC = 2.2 V, ICQ = 5 mA Collector Current or Power Added Efficiency vs. Input Power 28 24 Power Gain, GP (dB) 20 0.6 f = 434 MHz, VCC = 2.2 V, ICQ = 5 mA 60 Collector Efficiency, C (%) 50 40 C Output Power, POUT (dBm) Collector Current, IC (A) 30 25 POUT 0.5 0.4 0.3 0.2 IC 20 15 10 5 GP 16 12 8 4 10 12 14 16 30 20 10 0 10 12 14 16 0.1 0.0 0 2 4 6 8 0 2 4 6 8 Input Power, PIN (dBm) Input Power, PIN (dBm) Output Power or Power Gain vs. Input Power 35 f = 434 MHz, VCE = 2.2 V, ICQ = 50 mA 30 25 POUT 20 GP 15 10 5 0 2 4 6 8 10 12 14 12 8 4 16 16 28 24 Collector Current or Power Added Efficiency vs. Input Power 0.6 f = 434 MHz, VCE = 2.2 V, ICQ = 50 mA 0.5 0.4 C 60 50 40 30 20 IC 10 0 16 20 0.3 0.2 0.1 0.0 0 2 4 6 8 10 12 14 Input Power, PIN (dBm) Input Power, PIN (dBm) Power Added Efficiency, C (%) Output Power, POUT (dBm) Collector Current, IC (A) Power Gain, GP (dB) 6 THN5702F Application Information ( f = 434 MHz ) Operation Mode CW, class-AB f (MHz) 434 VCE (V) 3.0 POUT (dBm) 25 GP (dB) 15 C (%) 47 Output Power or Power Gain vs. Input Power 35 f = 434 MHz, VCC = 3.0 V, ICQ = 5 mA 30 25 20 15 10 5 0 2 4 6 8 10 12 14 28 24 Collector Current or Power Added Efficiency vs. Input Power 0.8 f = 434 MHz, VCC = 3.0 V, ICQ = 5 mA 0.7 80 0.6 0.5 0.4 0.3 IC 0.2 0.1 0.0 0 2 4 6 8 10 12 14 C 60 50 40 30 20 10 0 16 POUT GP 20 16 12 8 4 16 Input Power, PIN (dBm) Input Power, PIN (dBm) Output Power or Power Gain vs. Input Power 35 f = 434 MHz, VCE = 3.0 V, ICQ = 50 mA 30 25 20 15 10 5 0 2 4 6 8 10 12 14 POUT GP 28 24 Collector Current or Power Added Efficiency vs. Input Power 0.8 f = 434 MHz, VCE = 3.0 V, ICQ = 50 mA 0.7 80 0.6 0.5 C 60 50 40 IC 30 20 10 0 16 20 16 12 8 0.4 0.3 0.2 0.1 4 16 0.0 0 2 4 6 8 10 12 14 Input Power, PIN (dBm) Input Power, PIN (dBm) Power Added Efficiency, C (%) 70 Output Power, POUT (dBm) Collector Current, IC (A) Power Gain, GP (dB) Power Added Efficiency, C (%) 70 Output Power, POUT (dBm) Collector Current, IC (A) Power Gain, GP (dB) 7 THN5702F Test Circuit Schematic Diagram ( f = 460 MHz, 434MHz ) VBE 1 nF 100 pF 100 pF 1 nF VCE 0.5 X 1.5 X 6T 100 nH W=1.3 mm L=16 mm 15 pF 13 pF 27 pF W=1.3 mm L=31 mm 100 pF RF OUT RF IN 100 pF W=1.3 mm L=32 mm W=1.3 mm L=6.8 mm W=1.3 mm L=1.8 mm Evaluation Board ( f = 460 MHz, 434 MHz ) VBE VCE RF IN RF OUT Notes 1. FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm 2. Evaluation board dimension = 119 50 mm2 8 |
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